2011 Paper Awards |
He Bong Kim Award |
 Investigation and Reduction of Leakage Current Associated with Gate Encapsulation by SiNx in AlGaN/GaN HFETs |
S. A. Chevtchenko, P. Kurpas, N. Chaturvedi, R. Lossy and J. Würfl Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany |
Best Student Paper Award |
 Type-II DHBTs Microwave Characterization and Metallization Issues |
Kuang-Yu (Donald) Cheng and Milton Feng
University of Illinois at Urbana-Champaign |
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 Impact Ionization in AlGaN/GaN HEMTs with InGaN Back-Barrier |
Nicole Killat, Milan Tapajna, Mustapha Faqir, Tomas Palacios, and Martin Kuball
University of Bristol; MIT
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2011 Conference Paper Awards
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