Development and Characterization of a 600 Å PecVD Si3N4
High-Density MIM Capacitor for InGaP/GaAs HBT Applications
Jiro Yota,
Richard Burton, Parminder Bal, Lance Rushing
Skyworks Solutions, Inc.
GaAs Technology
Email: jiro.yota@skyworksinc.com
Keywords: PecVD Silicon Nitride, MIM Capacitor, InGaP/GaAs, HBT
Abstract
We have developed and characterized an ultra-thin 600 Å silicon nitride
high-density MIM capacitor for InGaP/GaAs HBT applications. This thin silicon
nitride film was deposited using PecVD method at 300ºC, and has a capacitance
density of 0.93 fF/µm 2 with a high breakdown field of >10 MV/cm. The
film has low wet-etch rate and passes standard high humidity and high
temperature pressure cooker tests. This Si3N4 MIM capacitor was demonstrated to
have excellent TDDB lifetime, as well as good ESD characteristics. Physical and
optical characterization, including X-SEM, AFM, and FTIR, show that the film
has good conformality, low surface roughness, and does not degrade and absorb
water. Furthermore, the film is manufacturable with good process control
characteristics, including film thickness, refractive index, uniformity,
stress, and with low particle density.