Release
for production of a 150GHz, 125nm gate 40% In In0,4 metamorphic
GaAs HEMT MMIC process
J.Bellaïche,
P.Baudet, S.Demichel, M.Renvoisé, H.Maher, J.F.Pautrat, MG.Périchaud, S.Lafont
OMMIC, 22 Avenue Descartes , 94453 Limeil-Brévannes:
e.mail j.bellaiche@ommic.com
This
paper deals with the release for production of a 150 GHz, 125 nm gate 40% InIn0,4
metamorphic GaAs HEMT MMIC process. It includes a discussion on the
importance of the process development sequence in ensuring a production
release. Key points are the objective performance definition and the
understanding of the critical process parameters so as to establish an
effective control plan vital for a good process control in production.