Determination of Junction Temperature of GaN-based Light Emitting Diodes by Electroluminescence and Micro-Raman Spectroscopy

Yaqi Wang¹, Hui Xu¹, Siddharth Alur¹, An-Jen Cheng¹, Minseo Park^1*, Sharukh Sakhawat², Arindra N. Guha², Okechukwu Akpa², Saritha Akavaram² and Kalyankumar Das^²

¹Department of Physics, Auburn University, Auburn, AL 36849 ²Electrical Engineering Department, Tuskegee University, Tuskegee, AL 36088 *corresponding author Phone: 334-844-4627 Email: wangyaq@auburn.edu

Keywords: GaN, LED, Electroluminescence, Raman spectroscopy
ABSTRACT
Rise of junction temperature during operation can greatly affect performance and reliability of Light-emitting diodes (LED). Unfortunately, the junction temperature of the LED can not be measured directly. In this report, non-contact methods using Electroluminescence (EL) and Micro-Raman spectroscopy were employed to estimate the junction temperature of GaNbased LED.

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